SPP80N06S2-09 |
RFQ for SPP80N06S2-09 |
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| Technical/Catalog Information | SPP80N06S2-09 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 3140pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP80N06S2 09 SPP80N06S209 |
| Product | Manufacturers | Pack | D/C |
| SPP80N06S2-09 | - | P-TO220-3-1 | `06+(pb-free) |
Features |
| · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt rated |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 370 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 19 | |
| Reverse diode dv/dt IS = 80 A, VDS = 44 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 190 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed i
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